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Magnetoptikkristalle

Einzelkristall Substrate

Piezoelektrische Effektkristalle

Faraday-Isolator

Glitzerkristalle

Laserkristalle

Pockels-Zell-Q-Schalter

Andere Einzelkristalle

TGG-Kristall

TSAG-Kristall

GGG Kristall

LaAlO3-Wafer

Q Wechselkristalle
lösungen
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Created with Pixso. Zu Hause Created with Pixso. Produits Created with Pixso.
Pockels-Zell-Q-Schalter
Created with Pixso. LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
  • Name
  • Name
  • Name
  • Name

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

Markenbezeichnung: Crystro
Modellnummer: PCR-2026-13-01
Lieferzeit: 3-4 Wochen
Zahlungsbedingungen: T/T, Western Union, MoneyGram, Paypal
Einzelheiten
Beschreibung des Produkts
Einzelheiten
Herkunftsort:
China
Blende, mm:
2,5/5/8/9
Größe:
55*28*24 mm
Wellenlänge:
1064 nm
Elektrodentyp:
Au/Cr
λ/2 Spannung (V@632,8 nm):
400/800
λ/4 Spannung (V@1064 nm):
1800-1900/2100
Einfügedämpfung:
< 3 %
Wellenfrontverzerrung:
< λ/8@632,8 nm
Löschungs-Verhältnis:
200:1 (Φ1 mm Fläche)
Hervorheben:

LN Pockels cells for Q-Switch

,

LiNbO3 Pockels cells with AR coating

,

Pockels cells low half wave voltage

Beschreibung des Produkts

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

 

LN (LiNbO3) Pockels Cell, is a comprehensive and excellent pockels cell.The device is widely used in optical communication and optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.

 

  Clear aperture Shell Size Half-wave lambda/4 Voltage
CPMLPC-09-1064nm-Q 9mm Dia.30mm x L26mm 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPMLPC-09-1064-Q-S 9mm

Square design

18 x 17 x 20mm		 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPLNPC-090925-3031-1064 9mm Dia.30 x 31mm

1700V λ/4 at 1064nm

Electro-optic Q-Switching
Transmittance >98% Transmission distortion of the crystal λ/6 @ 633nm
Insertion Loss 2% Crystal Flatness λ/8 @ 633nm
Recommended Qswitched Output Energy 100 mJ Extinction Ratio 300:1 - 500:1
Capacitance 5pF Xsurface with Au/Cr electrode  
Damage Threshold 00 MW/cm2 1064nm 10ns 10Hz (LN Q Switch    

 

Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.

 

By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.

 

 

Features

High-Speed Modulation Capability
Wide Transmittance Range
Low Driving Voltage
Excellent Physicochemical StabilityLN (LiNbO3) Pockels Cell

 

 

Schlagworte: 

Schalter pockel Zellen q  

Magnetoptikmodulator  

pockels Zellmodulator

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Einzelheiten Zu Den Produkten

Created with Pixso. Zu Hause Created with Pixso. Produits Created with Pixso.
Pockels-Zell-Q-Schalter
Created with Pixso. LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
Alle Kategorien

Magnetoptikkristalle

Einzelkristall Substrate

Piezoelektrische Effektkristalle

Faraday-Isolator

Glitzerkristalle

Laserkristalle

Pockels-Zell-Q-Schalter

Andere Einzelkristalle

TGG-Kristall

TSAG-Kristall

GGG Kristall

LaAlO3-Wafer

Q Wechselkristalle
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
  • Name
  • Name
  • Name
  • Name

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

Markenbezeichnung: Crystro
Modellnummer: PCR-2026-13-01
Zahlungsbedingungen: T/T, Western Union, MoneyGram, Paypal
Einzelheiten
Beschreibung des Produkts
Einzelheiten
Herkunftsort:
China
Markenname:
Crystro
Modellnummer:
PCR-2026-13-01
Blende, mm:
2,5/5/8/9
Größe:
55*28*24 mm
Wellenlänge:
1064 nm
Elektrodentyp:
Au/Cr
λ/2 Spannung (V@632,8 nm):
400/800
λ/4 Spannung (V@1064 nm):
1800-1900/2100
Einfügedämpfung:
< 3 %
Wellenfrontverzerrung:
< λ/8@632,8 nm
Löschungs-Verhältnis:
200:1 (Φ1 mm Fläche)
Lieferzeit:
3-4 Wochen
Zahlungsbedingungen:
T/T, Western Union, MoneyGram, Paypal
Hervorheben:

LN Pockels cells for Q-Switch

,

LiNbO3 Pockels cells with AR coating

,

Pockels cells low half wave voltage

Beschreibung des Produkts

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

 

LN (LiNbO3) Pockels Cell, is a comprehensive and excellent pockels cell.The device is widely used in optical communication and optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.

 

  Clear aperture Shell Size Half-wave lambda/4 Voltage
CPMLPC-09-1064nm-Q 9mm Dia.30mm x L26mm 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPMLPC-09-1064-Q-S 9mm

Square design

18 x 17 x 20mm		 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPLNPC-090925-3031-1064 9mm Dia.30 x 31mm

1700V λ/4 at 1064nm

Electro-optic Q-Switching
Transmittance >98% Transmission distortion of the crystal λ/6 @ 633nm
Insertion Loss 2% Crystal Flatness λ/8 @ 633nm
Recommended Qswitched Output Energy 100 mJ Extinction Ratio 300:1 - 500:1
Capacitance 5pF Xsurface with Au/Cr electrode  
Damage Threshold 00 MW/cm2 1064nm 10ns 10Hz (LN Q Switch    

 

Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.

 

By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.

 

 

Features

High-Speed Modulation Capability
Wide Transmittance Range
Low Driving Voltage
Excellent Physicochemical StabilityLN (LiNbO3) Pockels Cell

 

 

Schlagworte: 

Schalter pockel Zellen q

Magnetoptikmodulator

pockels Zellmodulator

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ROHS Schnellschalter BBO Pockels Zelle Nichtlineare optische Crysta

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